MJW18020 دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت MJW18020	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi MJW18020G
Transistor Type: NPN
Operating Temperature: -65°C~+150°C@(Tj)
Collector Current (Ic): 30A
Power Dissipation (Pd): 250W
Transition Frequency (fT): 13MHz
DC Current Gain (hFE@Ic,Vce): 14@3A,5V
Collector Cut-Off Current (Icbo): 100uA
Collector-Emitter Breakdown Voltage (Vceo): 450V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 900mV@20A,4A
Package: TO-247
Manufacturer: onsemi
Series: -
Packaging: Tube
Part Status: Active
Current - Collector (Ic) (Max): 30A
Voltage - Collector Emitter Breakdown (Max): 450V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 4A, 20A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 3A, 5V
Power - Max: 250W
Frequency - Transition: 13MHz
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Base Part Number: MJW18
detail: Bipolar (BJT) Transistor NPN 450V 30A 13MHz 250W Through Hole TO-247